Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high- k dielectric/SiO 2 gate stack

By Xue-Feng Zhang   Jing-Ping Xu   Pui-To Lai   Chun-Xia Li   Jian-Guo Guan  

Chinese Physics, Vol. 16, Iss. 12, 2007-12 ,pp. : 3820-3826

IOP Publishing

Access to resources Recommend Favorite

Memory devices obtained by Si+ irradiation through poly-Si/SiO2 gate stack

By  

Journal of Physics: Conference Series , Vol. 10, Iss. 1, 2005-01 ,pp. : 7-10

IOP Publishing

Access to resources Recommend Favorite

Impact of charge trapping effect on negative bias temperature instability in P-MOSFETs with HfO2/SiON gate stack

By  

Journal of Physics: Conference Series , Vol. 100, Iss. 4, 2008-03 ,pp. : 186-189

IOP Publishing

Access to resources Recommend Favorite

Comparison between N₂ and O₂ anneals on the integrity of an Al₂O₃/Si₃N₄/SiO₂/Si memory gate stack

By Yu-Qiong Chu   Man-Hong Zhang   Zong-Liang Huo   Ming Liu  

Chinese Physics B, Vol. 23, Iss. 8, 2014-08 ,pp. : 88501-88505

IOP Publishing

Access to resources Recommend Favorite

Energy-band alignment of atomic layer deposited (HfO

By Ren-Xu Jia   Lin-Peng Dong   Ying-Xi Niu   Cheng-Zhan Li   Qing-Wen Song   Xiao-Yan Tang   Fei Yang   Yu-Ming Zhang  

Chinese Physics B, Vol. 24, Iss. 3, 2015-03 ,pp. : 38103-38106

IOP Publishing

Access to resources Recommend Favorite