Optimized operation of silicon nanowire field effect transistor sensors

Publisher： IOP Publishing

E-ISSN： 1361-6528|25|50|505501-505507

ISSN： 0957-4484

Source： Nanotechnology, Vol.25, Iss.50, 2014-12, pp. : 505501-505507

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Laser direct synthesis of silicon nanowire field effect transistors

By  

Nanotechnology, Vol. 26, Iss. 5, 2015-02 ,pp. : 55306-55310

IOP Publishing

Access to resources Recommend Favorite

Tunable threshold voltage of an n-type Si nanowire ferroelectric-gate field effect transistor for high-performance nonvolatile memory applications

By   Lee Jae-Hyun     Cha SeungNam   Whang Dongmok      

Nanotechnology, Vol. 25, Iss. 20, 2014-05 ,pp. : 205201-205208

IOP Publishing

Access to resources Recommend Favorite

Characterization of a vertically movable gate field effect transistor using a silicon-on-insulator wafer

By Song In-Hyouk   Forfang William B D   Cole Bryan    

Journal of Micromechanics and Microengineering, Vol. 24, Iss. 10, 2014-10 ,pp. : 105002-105009

IOP Publishing

Access to resources Recommend Favorite

The Effect of Trapped Charge on Silicon Nanowire Pseudo-MOSFETs

By Nam Incheol   Kim Minsuk   Najam Syed Faraz   Lee Eunhong   Hwang Sungwoo   Kim Sangsig  

Journal of Nanoscience and Nanotechnology, Vol. 13, Iss. 9, 2013-09 ,pp. : 6409-6412

American Scientific Publishers

Access to resources Recommend Favorite

Simulation Model of a Ferroelectric Field Effect Transistor

By MacLeod Todd C.   Ho Fat Duen  

Integrated Ferroelectrics, Vol. 49, Iss. 1, 2002-01 ,pp. : 51-59

Taylor & Francis Ltd

Access to resources Recommend Favorite