Effects of Annealing on Schottky Characteristics in AlGaN/GaN HEMT with Transparent Gate Electrode

Publisher: IOP Publishing

E-ISSN: 1741-3540|31|12|128501-128504

ISSN: 0256-307X

Source: Chinese Physics Letters, Vol.31, Iss.12, 2014-12, pp. : 128501-128504

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content