A Quasi-3D Threshold Voltage Model for Dual-Metal Quadruple-Gate MOSFETs

Publisher： IOP Publishing

E-ISSN： 1741-3540|31|12|128502-128504

ISSN： 0256-307X

Source： Chinese Physics Letters, Vol.31, Iss.12, 2014-12, pp. : 128502-128504

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate

By Cong Li   Yi-Qi Zhuang   Li Zhang   Gang Jin  

Chinese Physics B, Vol. 23, Iss. 1, 2014-01 ,pp. : 18501-18506

IOP Publishing

Access to resources Recommend Favorite

A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D) SOI MOSFETs with high-k dielectric

By Dubey Sarvesh   Dubey Sarvesh   Dubey Sarvesh  

Chinese Physics B, Vol. 24, Iss. 10, 2015-10 ,pp. : 108505-108512

IOP Publishing

Access to resources Recommend Favorite

A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET

By  

Chinese Physics B, Vol. 23, Iss. 11, 2014-11 ,pp. : 118505-118510

IOP Publishing

Access to resources Recommend Favorite

A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate MOSFETs

By Cong Li   Yi-Qi Zhuang   Li Zhang   Gang Jin  

Chinese Physics B, Vol. 23, Iss. 3, 2014-03 ,pp. : 38502-38507

IOP Publishing

Access to resources Recommend Favorite

Threshold Voltage Characteristics of Superconductor Gate nMOSFET at 4.2 K

By  

Le Journal de Physique IV, Vol. 06, Iss. C3, 1996-04 ,pp. : C3-73-C3-78

Edp Sciences

Access to resources Recommend Favorite