Impact of delta-doping position on photoluminescence in type-II InAs/GaAsSb quantum dots
Publisher: IOP Publishing
E-ISSN: 1361-6641|30|3|35006-35011
ISSN: 0268-1242
Source: Semiconductor Science and Technology, Vol.30, Iss.3, 2015-03, pp. : 35006-35011
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Abstract