Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high-k/metal gate last process

Publisher： IOP Publishing

E-ISSN： 1741-4199|24|11|117306-117309

ISSN： 1674-1056

Source： Chinese Physics B, Vol.24, Iss.11, 2015-11, pp. : 117306-117309

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