Effect of Xe ion (167 MeV) irradiation on polycrystalline SiC implanted with Kr and Xe at room temperature

E-ISSN： 1361-6463|48|46|465306-465312

ISSN： 0022-3727

Source： Journal of Physics D: Applied Physics, Vol.48, Iss.46, 2015-11, pp. : 465306-465312

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