Investigation of the Role of Aspect Ratio for the Design of Si-Nanowire Field-Effect-Transistors in Ballistic Regime

By Chowdhury Basudev Nag   Chattopadhyay Sanatan  

Nanoscience and Nanotechnology Letters, Vol. 5, Iss. 10, 2013-10 ,pp. : 1087-1090

American Scientific Publishers

Access to resources Recommend Favorite

Simulation, modelling and characterisation of quasi-ballistic transport in nanometer sized field effect transistors: from TCAD to atomistic simulation

By Roche Stephan   Poiroux Thierry   Lecarval Gilles   Barraud Sylvain   Triozon Francois   Persson Martin   Niquet Yann Michel  

International Journal of Nanotechnology, Vol. 7, Iss. 4-5, 2010-02 ,pp. : 348-366

Inderscience Publishers

Access to resources Recommend Favorite

Low stress nitride as surface isolation in bipolar transistors

By Nanver L. K.   French P. J.   Goudena E. J. G.   van Zeijl H. W.  

Materials Science and Technology, Vol. 11, Iss. 1, 1995-01 ,pp. : 36-40

Maney Publishing

Access to resources Recommend Favorite

Cutting force modelling considering cutter deflection for sculptured surface milling

By Cao Qingyuan   Zhao Jun   Li Yueen  

International Journal of Manufacturing Technology and Management, Vol. 22, Iss. 4, 2011-08 ,pp. : 362-375

Inderscience Publishers

Access to resources Recommend Favorite

A Study on Millimetre-Wave Tunable Bandpass Filter Based on Polymer Cap Deflection

By Seok Seonho   Kim Janggil   Rolland Nathalie   Rolland Paul-Alain  

Micromachines, Vol. 3, Iss. 1, 2012-01 ,pp. : 28-35

MDPI

Access to resources Recommend Favorite