Author: Simoen E Jayachandran S Delabie A Caymax M Heyns M
Publisher: IOP Publishing
E-ISSN: 1361-6641|31|2|25015-25022
ISSN: 0268-1242
Source: Semiconductor Science and Technology, Vol.31, Iss.2, 2016-02, pp. : 25015-25022
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Effect of oxygen precipitation on voids in bulk silicon
By Yu X. Yang D. Ma X. Xu J. Li L. Que D.
Microelectronic Engineering, Vol. 66, Iss. 1, 2003-04 ,pp. :