High-k gate dielectric GaAs MOS device with LaON as interlayer and NH3-plasma surface pretreatment

Author： Chao-Wen Liu   Jing-Ping Xu   Lu Liu   Han-Han Lu  

Publisher： IOP Publishing

E-ISSN： 1741-4199|24|12|127304-127308

ISSN： 1674-1056

Source： Chinese Physics B, Vol.24, Iss.12, 2015-12, pp. : 127304-127308

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