Author: Marona Lucja Smalc-Koziorowska Julita Grzanka Ewa Sarzynski Marcin Suski Tadek Schiavon Dario Czernecki Robert Perlin Piotr Kucharski Robert Domagala Jaroslaw
Publisher: IOP Publishing
E-ISSN: 1361-6641|31|3|35001-35007
ISSN: 0268-1242
Source: Semiconductor Science and Technology, Vol.31, Iss.3, 2016-03, pp. : 35001-35007
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Advantages of InGaN/GaN light emitting diodes with p-GaN grown under high pressure
Journal of Semiconductors, Vol. 35, Iss. 11, 2014-11 ,pp. :