The effect of substrate misorientation on the optical, structural, and electrical properties of GaN grown on sapphire by MOCVD

By Grudowski P.   Holmes A.   Eiting C.   Dupuis R.  

Journal of Electronic Materials, Vol. 26, Iss. 3, 1997-03 ,pp. : 257-261

Springer Publishing Company

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Effect of O 2 /CHF 3 plasma treatment on n-type GaN grown on sapphire by MOCVD

By Qin Z.X.   Chen Z.Z.   Zhang H.X.   Ding X.M.   Hu X.D.   Yu T.J.   Tong Y.Z.   Zhang G.Y.  

Materials Science in Semiconductor Processing, Vol. 5, Iss. 6, 2002-12 ,pp. : 473-475

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Effects of H 2 /NH 3 flow-rate ratio on the luminescent, structural, and electrical properties of GaN epitaxial layers grown by MOCVD

By Yang Chien-Cheng   Koh Pao-Ling   Wu Meng-Chyi   Lee Chih-hao   Chi Gou-Chung  

Journal of Electronic Materials, Vol. 28, Iss. 10, 1999-10 ,pp. : 1096-1100

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Effect of gas feeding methods on optical properties of GaN grown by rapid thermal chemical vapor deposition reactor

By Kim Sun   Seo Young   Nahm Kee   Hahn Yun   Shim Hyun   Suh Eun-Kyung   Lim Kee   Lee Hyung  

Journal of Electronic Materials, Vol. 28, Iss. 8, 1999-08 ,pp. : 970-974

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Surface etching of 6H-SiC (0001) and surface morphology of the subsequently grown GaN via MOCVD

By Xie Z.   Wei C.   Chen S.   Jiang S.   Edgar J.  

Journal of Electronic Materials, Vol. 29, Iss. 4, 2000-04 ,pp. : 411-417

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