Application of In Situ 3D Computed Tomography during PVT Growth of 4H-SiC for the Study of Source Material Consumption under Varying Growth Conditions

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2016|858|49-52

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 49-52

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