Elementary Screw and Mixed-Type Dislocations in 4H-SiC Characterized by X-Ray Topography Taken with Six Equivalent 11-28 g-Vectors and a Comparison to Etch Pit Evaluation

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Trans Tech Publications

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Analysis of contrasts and identifications of Burgers vectors for basal-plane dislocations and threading edge dislocations in 4H-SiC crystals observed by monochromatic synchrotron X-ray topography in grazing-incidence Bragg-case geometry

By Matsuhata Hirofumi  

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Taylor & Francis Ltd

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Direct observation of dislocations propagated from 4H-SiC substrate to epitaxial layer by X-ray topography

By Ohno T.   Yamaguchi H.   Kuroda S.   Kojima K.   Suzuki T.   Arai K.  

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Contrast analysis of Shockley partial dislocations in 4H-SiC observed by synchrotron Berg–Barrett X-ray topography

By Matsuhata Hirofumi   Yamaguchi Hirotaka   Yamashita Tamotsu   Tanaka Toshiaki   Chen Bin   Sekiguchi Takashi  

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Comparison of Test Methods for Proper Characterization of V_T in SiC MOSFETs

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