Etching Rate Behavior of 4H-Silicon Carbide Epitaxial Film Using Chlorine Trifluoride Gas

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2016|858|715-718

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 715-718

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Abstract

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