Strain state in single quantum well GaAs/1ML-InAs/GaAs(100) analysed by high-resolutionX-ray diffraction

Author: Zheng Y.   Boulliard J. C.   Capelle B.   Lifchitz A.   S. Y.  

Publisher: Edp Sciences

E-ISSN: 1286-4854|41|6|623-628

ISSN: 0295-5075

Source: EPL (EUROPHYSICS LETTERS), Vol.41, Iss.6, 2010-03, pp. : 623-628

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Abstract