The influence of poly‐Si/SiGe gate in CMOS transistors for RF and microwave circuit applications

Publisher： John Wiley & Sons Inc

E-ISSN： 1610-1642|7|2|440-443

ISSN： 1862-6351

Source： PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Vol.7, Iss.2, 2010-02, pp. : 440-443

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

AN ultra‐wideband SiGe BiCMOS LNA for W‐band applications

By  

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Vol. 57, Iss. 6, 2015-06 ,pp. : 1274-1278

John Wiley & Sons Inc

Access to resources Recommend Favorite

SiGe - heterostructures for CMOS technology

By Whall T.E.   Parker E.H.C.  

Thin Solid Films, Vol. 367, Iss. 1, 2000-05 ,pp. : 250-259

Elsevier

Access to resources Recommend Favorite

Integration of SiGe heterojunction bipolar transistors in a 200 mm industrial BiCMOS technology

By De Berranger E.   Bodnar S.   Chantre A.   Regolini J.L.   Mouis M.   Kirtsch J.   Monroy A.   Granier A.   Laurens M.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 250-253

Elsevier

Access to resources Recommend Favorite

Highly conducting doped poly-Si deposited by hot wire CVD and its applicability as gate material for CMOS devices

By Patil S.B.   Vairagar A.V.   Kumbhar A.A.   Sahu L.K.   Ramgopal Rao V.   Venkatramani N.   Dusane R.O.   Schroeder B.  

Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. : 63-66

Elsevier

Access to resources Recommend Favorite

Comparison of SiGe and SiGe:C heterojunction bipolar transistors

By Knoll D.   Heinemann B.   Ehwald K.-E.   Tillack B.   Schley P.   Osten H.J.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 342-346

Elsevier

Access to resources Recommend Favorite