Formation of an interface layer between Al_1‐xSi_xO_y thin films and the Si substrate during rapid thermal annealing

E-ISSN： 1610-1642|7|2|284-287

ISSN： 1862-6351

Source： PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Vol.7, Iss.2, 2010-02, pp. : 284-287

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