A doping concentration-dependent upper limit of the breakdown voltage-cutoff frequency product in Si bipolar transistors

Author： Rieh J.-S.   Jagannathan B.   Greenberg D.   Freeman G.   Subbanna S.  

Publisher： Elsevier

ISSN： 0038-1101

Source： Solid-State Electronics, Vol.48, Iss.2, 2004-02, pp. : 339-343

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