Effects of annealing temperature and surface preparation on the formation of cobalt silicide interconnects

Author： Wiemer C.   Tallarida G.   Bonera E.   Ricci E.   Fanciulli M.   Mastracchio G.F.   Pavia G.   Marangon S.  

Publisher： Elsevier

ISSN： 0167-9317

Source： Microelectronic Engineering, Vol.70, Iss.2, 2003-11, pp. : 233-239

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Silicide formation in co-deposited TiSi x layers: The effect of deposition temperature and Mo

By Ohmi S.   Tung R.  

Journal of Electronic Materials, Vol. 28, Iss. 10, 1999-10 ,pp. : 1115-1122

Springer Publishing Company

Access to resources Recommend Favorite

Effects of Thermal Annealing on the Formation of Buried β -SiC by Ion Implantation

By Poudel P.  

Journal of Electronic Materials, Vol. 40, Iss. 9, 2011-09 ,pp. : 1998-2003

Springer Publishing Company

Access to resources Recommend Favorite

Simulation of microstructural evolution induced by scanned laser annealing of metallic interconnects

By Hau-Riege C.   Hau-Riege S.   Thompson C.  

Journal of Electronic Materials, Vol. 30, Iss. 1, 2001-01 ,pp. : 11-16

Springer Publishing Company

Access to resources Recommend Favorite

Impact of Isothermal Aging on Long-Term Reliability of Fine-Pitch Ball Grid Array Packages with Sn-Ag-Cu Solder Interconnects: Surface Finish Effects

By Lee Tae-Kyu  

Journal of Electronic Materials, Vol. 39, Iss. 12, 2010-12 ,pp. : 2564-2573

Springer Publishing Company

Access to resources Recommend Favorite

Effects of process variation in VLSI interconnects ‐ a technical review

By Verma K.G.   Kaushik B.K.   Singh R.  

Microelectronics International, Vol. 26, Iss. 3, 2009-07 ,pp. : 49-55

Emerald Group Publishing Ltd

Access to resources Recommend Favorite