Leakage Current Behavior of the Bottom Gate Poly Thin-Film Transistor Fabricated by Copper Damascene Process

Author: Yun Seung Jae   Lee Yong Woo   Son Se Wan   Byun Chang Woo   Joo Seung Ki  

Publisher: American Scientific Publishers

ISSN: 1533-4899

Source: Journal of Nanoscience and Nanotechnology, Vol.13, Iss.10, 2013-10, pp. : 7155-7157

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Abstract