Comparative Analysis of Nano-Scale Structural and Electrical Properties in AlGaN/GaN High Electron Mobility Transistors on SiC and Sapphire Substrates

Author: Wang Cong   Cho Sung-Jin   Kim Nam-Young  

Publisher: American Scientific Publishers

ISSN: 1533-4899

Source: Journal of Nanoscience and Nanotechnology, Vol.13, Iss.10, 2013-10, pp. : 7083-7088

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