Thermal-Dependent Nonvolatile Memory Characteristics Based on Organic Ferroelectric Field-Effect Transistor

Author： Kim Won-Ho Choi Yoonseuk Bae Jin-Hyuk

Publisher： American Scientific Publishers

ISSN： 1533-4899

Source： Journal of Nanoscience and Nanotechnology, Vol.13, Iss.10, 2013-10, pp. : 7080-7082

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

MODELING OF A FERROELECTRIC FIELD-EFFECT TRANSISTOR STATIC RANDOM ACCESS MEMORY CELL

By Phillips Thomas Macleod Todd Ho Fat

Integrated Ferroelectrics, Vol. 96, Iss. 1, 2008-01 ,pp. : 69-74

Taylor & Francis Ltd

Access to resources Recommend Favorite

Tunable threshold voltage of an n-type Si nanowire ferroelectric-gate field effect transistor for high-performance nonvolatile memory applications

By Lee Jae-Hyun Cha SeungNam Whang Dongmok

Nanotechnology, Vol. 25, Iss. 20, 2014-05 ,pp. : 205201-205208

IOP Publishing

Access to resources Recommend Favorite

FERROELECTRIC FIELD-EFFECT TRANSISTOR DIFFERENTIAL AMPLIFIER CIRCUIT ANALYSIS

By PHILLIPS THOMAS MACLEOD TODD HO FAT

Integrated Ferroelectrics, Vol. 105, Iss. 1, 2009-01 ,pp. : 107-117

Taylor & Francis Ltd

Access to resources Recommend Favorite

Simulation Model of a Ferroelectric Field Effect Transistor

By MacLeod Todd C. Ho Fat Duen

Integrated Ferroelectrics, Vol. 49, Iss. 1, 2002-01 ,pp. : 51-59

Taylor & Francis Ltd

Access to resources Recommend Favorite

FABRICATION AND ELECTRICAL CHARACTERISTICS OF A METAL-FERROELECTRIC-POLYSILICON-INSULATOR-Si FIELD EFFECT TRANSISTOR

By Cai Daolin Li Ping Zhai Yahong Liu Jingsong Zhang Shuren Ou Yangfan Chen Yanyu Wu Dongshen

Integrated Ferroelectrics, Vol. 98, Iss. 1, 2008-01 ,pp. : 46-52

Taylor & Francis Ltd

Access to resources Recommend Favorite