Scanning electron and polarization microscopy study of the variability and character of hollow macro-defects in silicon carbide wafers

Author: Presser V.   Loges A.   Nickel K. G.  

Publisher: Taylor & Francis Ltd

ISSN: 1478-6443

Source: Philosophical Magazine, Vol.88, Iss.11, 2008-04, pp. : 1639-1657

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Abstract