Physicochemical properties of SiC-based ceramics deposited by low pressure chemical vapor deposition from CH 3 SiCl 3 -H 2

Author： Loumagne F. Langlais F. Naslain R. Schamm S. Dorignac D. Sevely J.

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.254, Iss.1, 1995-01, pp. : 75-82

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Optical absorption threshold of low pressure chemically vapor deposited silicon oxynitride films from SiCl 2 H 2 &unknown;NH 3 &unknown;N 2 O mixtures

By Davazoglou D.

Thin Solid Films, Vol. 437, Iss. 1, 2003-08 ,pp. : 266-271

Elsevier

Access to resources Recommend Favorite

Epitaxial growth of 3C-SiC by low-pressure chemical vapor deposition on a surface-structure-controlled molecular beam epitaxy layer

By Uchida M. Kitabatake M.

Thin Solid Films, Vol. 335, Iss. 1, 1998-11 ,pp. : 32-36

Elsevier

Access to resources Recommend Favorite

Surface morphology study and electrical properties of Si 1-x C x on Si grown by low pressure chemical vapor deposition

By He L. Shi Z.Q. Jiang N. Han P. Zheng Y.D.

Thin Solid Films, Vol. 318, Iss. 1, 1998-04 ,pp. : 15-17

Elsevier

Access to resources Recommend Favorite

a-SiC x :H films deposited by plasma-enhanced chemical vapor deposition at low temperature used for moisture and corrosion resistant applications

By Jiang L. Chen X. Wang X. Xu L. Stubhan F. Merkel K.-H.

Thin Solid Films, Vol. 352, Iss. 1, 1999-09 ,pp. : 97-101

Elsevier

Access to resources Recommend Favorite

Al 2 O 3 formation on Si by catalytic chemical vapor deposition

By Ogita Y.-I. Iehara S. Tomita T.

Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. : 161-164

Elsevier

Access to resources Recommend Favorite