Fabrication and characterization of MOS devices on 3C-SiC films grown by reactive magnetron sputtering on Si(111) substrates

By Wahab Q.   Turan R.   Hultman L.   Willander M.   Sundgren J.-E.  

Thin Solid Films, Vol. 287, Iss. 1, 1996-10 ,pp. : 252-257

Elsevier

Access to resources Recommend Favorite

Field emission of nanostructured amorphous SiCN films deposited by reactive magnetron sputtering of SiC in CH 4 /N 2 atmosphere

By Lin H.Y.   Chen Y.C.   Lin C.Y.   Tong Y.P.   Hwa L.G.   Chen K.H.   Chen L.C.  

Thin Solid Films, Vol. 416, Iss. 1, 2002-09 ,pp. : 85-91

Elsevier

Access to resources Recommend Favorite

Effect of the hydrogen partial pressure ratio on the properties of c-Si:H films prepared by rf magnetron sputtering

By Makihara H.   Tabata A.   Suzuoki Y.   Mizutani T.  

Vacuum, Vol. 59, Iss. 2, 2000-11 ,pp. : 785-791

Elsevier

Access to resources Recommend Favorite

Microstructure of BN:C films deposited on Si substrates by reactive sputtering from a B 4 C target

By Johansson M.P.   Hultman L.   Daaud S.   Bewilogua K.   Luthje H.   Schutze A.   Kouptsidis S.   Theunissen G.S.A.M.  

Thin Solid Films, Vol. 287, Iss. 1, 1996-10 ,pp. : 193-201

Elsevier

Access to resources Recommend Favorite

Electron microscopy characterization of TiN films on Si, grown by d.c. reactive magnetron sputtering

By Pecz B.   Frangis N.   Logothetidis S.   Alexandrou I.   Barna P.B.   Stoemenos J.  

Thin Solid Films, Vol. 268, Iss. 1, 1995-11 ,pp. : 57-63

Elsevier

Access to resources Recommend Favorite