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Thin Solid Films, Vol. 279, Iss. 1, 1996-06 ,pp. : 14-16

Elsevier

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Improvement of the crystallinity of a GaAs epitaxial film grown on a Si substrate using a Si/SiGe/Ge buffer layer

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Potentialities of AlGaN/GaN Heterostructures Grown on 2°-Off 4H-SiC Substrates

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