Size- and shape-controlled GaAs nano-whiskers grown by MOVPE: a growth study

By Borgstrom M.   Deppert K.   Samuelson L.   Seifert W.  

Journal of Crystal Growth, Vol. 260, Iss. 1, 2004-01 ,pp. : 18-22

Elsevier

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Optical characterisation of MOVPE-grown Ga 1-x Mn x As semimagnetic semiconductor layers

By Hartmann T.   Lampalzer M.   Stolz W.   Megges K.   Lorberth J.   Klar P.J.   Heimbrodt W.  

Thin Solid Films, Vol. 364, Iss. 1, 2000-03 ,pp. : 209-212

Elsevier

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Effects of intentional oxygen and carbon doping in MOVPE‐grown GaN layers on photoelectric properties

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PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Vol. 252, Iss. 5, 2015-05 ,pp. : 1116-1120

John Wiley & Sons Inc

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MOVPE technology and characterisation of silicon -doped GaAs and Al x Ga 1-x As

By Sciana B.   Radziewicz D.   Paszkiewicz B.   Tlaczala M.   Utko M.   Sitarek P.   Sek G.   Misiewicz J.   Kinder R.   Kovac J.   Srnanek R.  

Thin Solid Films, Vol. 412, Iss. 1, 2002-06 ,pp. : 55-59

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Synthesis of GaAs quantum dots on Si-layers on AlGaAs films grown on GaAs(100)

By Mendez-Garca V.H.   Perez-Centeno A.   Lopez-Lopez M.  

Thin Solid Films, Vol. 433, Iss. 1, 2003-06 ,pp. : 63-67

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