Surface diffusion of Fe and island growth of FeSi 2 on Si(111) surfaces

By Wohllebe A.   Hollander B.   Mesters S.   Dieker C.   Crecelius G.   Michelsen W.   Mantl S.  

Thin Solid Films, Vol. 287, Iss. 1, 1996-10 ,pp. : 93-100

Elsevier

Access to resources Recommend Favorite

Growth of Ge on H-terminated Si(111) surface

By Ishii K.   Kuriyama H.   Ezoe K.   Yamamoto T.   Ikeda M.   Matsumoto S.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 34-37

Elsevier

Access to resources Recommend Favorite

Growth mechanisms of SiGe on (111) and (100) Si substrates

By Gallas B.   Berbezier I.   Ronda A.   Derrien J.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 22-26

Elsevier

Access to resources Recommend Favorite

Ge thin film growth on Si(111) surface using hydrogen surfactant

By Fujino T.   Fuse T.   Ryu J.-T.   Inudzuka K.   Nakano T.   Goto K.   Yamazaki Y.   Katayama M.   Oura K.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 25-28

Elsevier

Access to resources Recommend Favorite

Nucleation and growth of Ge on Si(111) in solid phase epitaxy

By Suzumura I.   Okada M.   Muto A.   Torige Y.   Ikeda H.   Sakai A.   Zaima S.   Yasuda Y.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 116-120

Elsevier

Access to resources Recommend Favorite