Study of the effect of different plasma-enhanced chemical vapour deposition reactor configurations on the properties of hydrogenated amorphous silicon thin films

By Aguas H.   Silva V.   Ferreira I.   Fortunato E.   Martins R.  

Philosophical Magazine B, Vol. 80, Iss. 4, 2000-04 ,pp. : 475-486

Taylor & Francis Ltd

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Optical, structural and electrical properties of devicequality hydrogenated amorphous silicon-nitrogen films deposited by plasma-enhanced chemical vapour deposition

By Giorgis F.   Giuliani F.   Pirri C. F.   Tresso E.   Summonte C.   Rizzoli R.   Galloni R.   Desalvo A.   Rava P.  

Philosophical Magazine B, Vol. 77, Iss. 4, 1998-04 ,pp. : 925-944

Taylor & Francis Ltd

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On the optical constants of amorphous Ge x Se 1-x thin films of non-uniform thickness prepared by plasma-enhanced chemical vapour deposition

By Marquez E.   Nagels P.   Gonzalez-Leal J.M.   Bernal-Oliva A.M.   Sleeckx E.   Callaerts R.  

Vacuum, Vol. 52, Iss. 1, 1999-01 ,pp. : 55-60

Elsevier

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Optical properties of silicon nanocrystallites in polycrystalline silicon films prepared at low temperature by plasma-enhanced chemical vapor deposition

By Milovzorov D.E.   Ali A.M.   Inokuma T.   Kurata Y.   Suzuki T.   Hasegawa S.  

Thin Solid Films, Vol. 382, Iss. 1, 2001-02 ,pp. : 47-55

Elsevier

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Characterization of silicon oxide thin films deposited by plasma enhanced chemical vapour deposition from octamethylcyclotetrasiloxane/oxygen feeds

By Zajckova L.   Janca J.   Perina V.  

Thin Solid Films, Vol. 338, Iss. 1, 1999-01 ,pp. : 49-59

Elsevier

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