Strain compensation in Si 1-x-y Ge x C y layers prepared by ion implantation and excimer laser annealing

Author： Grob A.   Grob J.J.   Muller D.   Prevot B.   Stuck R.   Fogarassy E.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.294, Iss.1, 1997-02, pp. : 145-148

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