Characterisation of an n-type Si/SiGe modulation doped field-effect transistor

Author: Kuznetsov V.I.   Werner K.   Radelaar S.   Metselaar J.W.  

Publisher: Elsevier

ISSN: 0040-6090

Source: Thin Solid Films, Vol.294, Iss.1, 1997-02, pp. : 263-266

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Abstract