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Elsevier

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Novel strained Si/relaxed SiGe channel PMOSFETs

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Experimental study of a surfactant-assisted SiGe graded layer and a symmetrically strained Si/Ge superlattice for thermoelectric applications

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Experimental evidence of valence band deformation due to strain in inverted hole channel of strained-Si pMOSFETs

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Potential of 4H-SiC CMOS for High Temperature Applications Using Advanced Lateral p-MOSFETs

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