Author: Engel C. Baumgartner P. Holzmann M. Nutzel J.F. Abstreiter G.
Publisher: Elsevier
ISSN: 0040-6090
Source: Thin Solid Films, Vol.294, Iss.1, 1997-02, pp. : 347-350
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Hot carrier transport in modulation doped Si/SiGe and Ge/SiGe heterostructures
Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. :
Fully pseudomorphic Si/SiGe/Si heterostructures for p-channel field effect devices
By Whall T.E.
Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. :
SiGe - heterostructures for CMOS technology
Thin Solid Films, Vol. 367, Iss. 1, 2000-05 ,pp. :
CoSi 2 and TiSi 2 for Si/SiGe heterodevices
By Gluck M. Schuppen A. Rosler M. Heinrich W. Hersener J. Konig U. Yam O. Eizenberg M. Cytermann C.
Thin Solid Films, Vol. 270, Iss. 1, 1995-12 ,pp. :