Deposits obtained by photolysis of hexamethyldisilane by ArF excimer laser (SiC thin film preparation by ArF excimer laser chemical vapor deposition, Part 2)

Author： Watanabe A.   Mukaida M.   Tsunoda T.   Imai Y.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.300, Iss.1, 1997-05, pp. : 95-100

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

SiC thin film preparation by ArF excimer laser chemical vapor deposition Part 1: Rate of photolysis of alkylsilanes by ArF excimer laser and their decomposition products

By Watanabe A.   Osato K.   Ninomiya S.   Mukaida M.   Tsunoda T.   Imai Y.  

Thin Solid Films, Vol. 274, Iss. 1, 1996-03 ,pp. : 70-75

Elsevier

Access to resources Recommend Favorite

Study of material emission in ArF and KrF excimer laser ablation of yttria stabilized zirconia single crystals

By Sanchez F.   Aguiar R.   Serra P.   Varela M.   Morenza J.L.  

Thin Solid Films, Vol. 317, Iss. 1, 1998-04 ,pp. : 108-111

Elsevier

Access to resources Recommend Favorite

Preparation of boron carbide thin film by pulsed KrF excimer laser deposition process

By Aoqui S.-i.   Miyata H.   Ohshima T.   Ikegami T.   Ebihara K.  

Thin Solid Films, Vol. 407, Iss. 1, 2002-03 ,pp. : 126-131

Elsevier

Access to resources Recommend Favorite

Fast preparation of (111)‐oriented β‐SiC films without carbon formation by laser chemical vapor deposition from hexamethyldisilane without H2

By  

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, Vol. 101, Iss. 4, 2018-04 ,pp. : 1471-1478

John Wiley & Sons Inc

Access to resources Recommend Favorite

Stoichiometry of tantalum oxide films prepared by KrF excimer laser-induced chemical vapor deposition

By Imai Y.   Watanabe A.   Mukaida M.   Osato K.   Tsunoda T.   Fukuda K.   Kameyama T.  

Thin Solid Films, Vol. 261, Iss. 1, 1995-06 ,pp. : 76-82

Elsevier

Access to resources Recommend Favorite