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Elsevier

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Growth of strained Si/Si 1-y C y /Si 1-x Ge x structures by MBE

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Si/Si 1-x Ge x and Si/Si 1-y C y heterostructures: materials for high-speed field-effect transistors

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Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 1-10

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Structural and optical properties of Si/Si 1-x Ge x wires

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Threshold Voltage Variation of Nanoscale Strained Si/Si 1-x Ge x MOSFETs in the Presence of Punch Through Effect

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