Effect of N 2 O/SiH 4 ratio on the properties of low-temperature silicon oxide films from remote plasma chemical vapour deposition

By Rhee S.-W.   Park Y.-B.   Kang J.-K.  

Thin Solid Films, Vol. 280, Iss. 1, 1996-07 ,pp. : 43-50

Elsevier

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Hf 1-x Si x O 2 deposition by metal organic chemical vapor deposition using the Hf(NEt 2 ) 4 /SiH(NEt 2 ) 3 /O 2 gas system

By Ohshita Y.   Ogura A.   Ishikawa M.   Hoshino A.   Hiiro S.   Suzuki T.   Machida H.  

Thin Solid Films, Vol. 416, Iss. 1, 2002-09 ,pp. : 208-211

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Effects of gas composition and r.f. power on properties of a-C:H/SiC:H composite films grown by plasma-enhanced chemical vapor deposition

By Yi J.W.   Lee Y.H.   Farouk B.  

Thin Solid Films, Vol. 326, Iss. 1, 1998-08 ,pp. : 154-159

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Water absorption characteristics of fluorinated silicon oxide films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition using SiH 4 , SiF 4 and O 2

By Byun K.-M.   Lee W.-J.  

Thin Solid Films, Vol. 376, Iss. 1, 2000-11 ,pp. : 26-31

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Electron beam induced damage in N-rich SiN x films deposited by plasma enhanced chemical vapour deposition

By Vouroutzis N.   Paloura E.C.   Kuo Y.   Lioutas C.B.  

Thin Solid Films, Vol. 296, Iss. 1, 1997-03 ,pp. : 28-31

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