The effect of post-growth cooling rate on the defect structure in MBE-grown buried layers of Si 1-x Ge x on Si substrates

Author： Fatemi M. Thompson P.E. Twigg M.E. Chaudhuri J.

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.312, Iss.1, 1998-01, pp. : 362-371

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