Effects of atomic hydrogen on growth behavior of Si films by Si 2 H 6 -source molecular beam epitaxy

Author： Yasuda Y. Matsuyama T. Sato K. Kondo M. Ikeda H. Zaima S.

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.317, Iss.1, 1998-04, pp. : 48-51

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