Self-ordering of CoSi 2 precipitates and epitaxial layer growth of CoSi 2 on Si(100)

By Mantl S.   Hacke M.   Bay H.L.   Kappius L.   Mesters S.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 251-255

Elsevier

Access to resources Recommend Favorite

Retarded diffusion of boron in Si due to the formation of an epitaxial CoSi 2 layer

By Kappius L.   Bay H.L.   Mantl S.   Tyagi A.K.   Breuer U.   Becker J.S.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 26-28

Elsevier

Access to resources Recommend Favorite

Comparison of epitaxial growth of CoSi 2 among Co/Ti, Co/Hf, and Co/Nb bilayers on (100)Si

By Kwon Y.   Lee C.  

Thin Solid Films, Vol. 380, Iss. 1, 2000-12 ,pp. : 127-129

Elsevier

Access to resources Recommend Favorite

Strain relaxation in ultrathin epitaxial films of -FeSi 2 on unstrained and strained Si(100) surfaces

By Peale D.R.   Haight R.   Legoues F.K.  

Thin Solid Films, Vol. 264, Iss. 1, 1995-08 ,pp. : 28-39

Elsevier

Access to resources Recommend Favorite

The growth of an intermediate CoSi phase during the formation of epitaxial CoSi 2 by solid phase reaction

By Falke M.   Gebhardt B.   Beddies G.   Teichert S.   Hinneberg H.-J.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 201-204

Elsevier

Access to resources Recommend Favorite