The volume expansion of the {1120} planar defect in 2H-GaN/6H-SiC (0001) Si grown by MBE

Author: Vermaut P.   Bere A.   Ruterana P.   Nouet G.   Hairie A.   Paumier E.  

Publisher: Elsevier

ISSN: 0040-6090

Source: Thin Solid Films, Vol.319, Iss.1, 1998-04, pp. : 153-156

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Abstract