Spectroscopic ellipsometry of Si x Ge 1-x /Si: a tool for composition and profile analysis in strained heterostructures used in the microelectronics industry

By Ferrieu F.   Ribot P.   Regolini J.L.  

Thin Solid Films, Vol. 373, Iss. 1, 2000-09 ,pp. : 211-215

Elsevier

Access to resources Recommend Favorite

Applications of variable angle spectroscopic ellipsometry to strained SiGe alloy heterostructures

By Heyd A.R.   Alterovitz S.A.   Croke E.T.   Wang K.L.   Lee C.H.  

Thin Solid Films, Vol. 270, Iss. 1, 1995-12 ,pp. : 91-96

Elsevier

Access to resources Recommend Favorite

Structural and optical properties of undoped and doped ZnSe/GaAs strained heterostructures

By Kim T.W.   Jung M.   Lee D.U.   Oh E.   Lee S.D.   Jung H.D.   Kim M.D.   Kim J.R.   Park H.S.   Lee J.Y.  

Thin Solid Films, Vol. 298, Iss. 1, 1997-04 ,pp. : 187-190

Elsevier

Access to resources Recommend Favorite

Ultrathin InAlN/GaN heterostructures with high electron mobility

By  

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Vol. 252, Iss. 5, 2015-05 ,pp. : 1006-1010

John Wiley & Sons Inc

Access to resources Recommend Favorite

XRD Analysis of the Role of Cesium in Sodium‐Based Geopolymer

By  

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, Vol. 98, Iss. 4, 2015-04 ,pp. : 1308-1313

John Wiley & Sons Inc

Access to resources Recommend Favorite