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Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 92-95

Elsevier

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The effect of 63 MeV hydrogen ion irradiation on 65 GHz UHV/CVD SiGe HBT BiCMOS technology

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Photoluminescence in UHV-CVD-grown Si 1-x Ge x quantum wells on Si(100): band alignment variation with excitation density and applied uniaxial stress

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Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 158-162

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X-Ray scattering investigation of the interfaces in Si/Si 1-x Ge x superlattices on Si(001) grown by MBE and UHV-CVD

By Baribeau J.-M.   Lafontaine H.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 141-147

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Optical and structural characterization of Si/SiGe heterostructures grown by RTCVD

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