Atomic hydrogen for the formation of abrupt Sb doping profiles in MBE-grown Si

By Thompson P.E.   Silvestre C.   Twigg M.   Jernigan G.   Simons D.S.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 120-124

Elsevier

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Self-organization processes in MBE-grown quantum dot structures

By Bimberg D.   Grundmann M.   Ledentsov N.N.   Ruvimov S.S.   Werner P.   Richter U.   Heydenreich J.   Alferov Z.I.   Kop'ev P.S.   Ustinov V.M.  

Thin Solid Films, Vol. 267, Iss. 1, 1995-10 ,pp. : 32-36

Elsevier

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Electrical properties of diamond films grown at low temperature

By Chen C.-F.   Chen S.-H.   Lin K.-M.  

Thin Solid Films, Vol. 270, Iss. 1, 1995-12 ,pp. : 205-209

Elsevier

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Analysis of photoluminescence efficiency and surface recombination velocity of MBE-grown AlGaAs layers

By Adamowicz B.   Hasegawa H.  

Thin Solid Films, Vol. 367, Iss. 1, 2000-05 ,pp. : 180-183

Elsevier

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Solid solutions GeSi grown by MBE on a low temperature Si (001) buffer layer: specific features of plastic relaxation

By Bolkhovityanov Y.B.   Gutakovskii A.K.   Mashanov V.I.   Pchelyakov O.P.   Revenko M.A.   Sokolov L.V.  

Thin Solid Films, Vol. 392, Iss. 1, 2001-07 ,pp. : 98-106

Elsevier

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