Some characteristics of silicon-doped In 0.52 Al 0.48 As grown lattice-matched on InP substrates by molecular beam epitaxy

By Yoon S.F.   Miao Y.B.   Radhakrishnan K.  

Thin Solid Films, Vol. 287, Iss. 1, 1996-10 ,pp. : 284-287

Elsevier

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Excitation dependence of photoluminescence linewidth in InAlAs grown on InP substrates by molecular beam epitaxy

By Yoon S.F.   Radhakrishnan K.   Du Q.  

Thin Solid Films, Vol. 295, Iss. 1, 1997-02 ,pp. : 310-314

Elsevier

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Erbium-silicon light-emitting diodes grown by molecular beam epitaxy: Optical properties

By Stimmer J.   Reittinger A.   Neufeld E.   Abstreiter G.   Holzbrecher H.   Breuer U.   Buchal C.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 220-222

Elsevier

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Optical properties of GaAs 1− x N x alloys grown by molecular beam epitaxy

By Alam J.  

Philosophical Magazine, Vol. 86, Iss. 23, 2006-08 ,pp. : 3477-3486

Taylor & Francis Ltd

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Characterization of SiGe strained heterostructures grown by molecular beam epitaxy using a Si effusion cell

By Yaguchi H.   Yamamoto T.   Shiraki Y.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 241-244

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