Thin film interaction between low-k dielectric hydrogen silsesquioxane (HSQ) and Ti barrier layer

By Zeng Y.   Russell S.W.   McKerrow A.J.   Chen P.   Alford T.L.  

Thin Solid Films, Vol. 360, Iss. 1, 2000-02 ,pp. : 283-292

Elsevier

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Enhancing the thermal stability of low dielectric constant hydrogen silsesquioxane by ion implantation

By Chang T.C.   Chou M.F.   Mei Y.J.   Tsang J.S.   Pan F.M.   Wu W.F.   Tsai M.S.   Chang C.Y.   Shih F.Y.   Huang  

Thin Solid Films, Vol. 332, Iss. 1, 1998-11 ,pp. : 351-355

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Effects of double bonding configurations on thermal stability of low-hydrogen concentration fluorinated amorphous carbon thin-films with low dielectric constant prepared by sputtering with hydrogen dilution

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Vacuum, Vol. 59, Iss. 2, 2000-11 ,pp. : 771-776

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Properties of low dielectric constant fluorinated silicon oxide films prepared by plasma enhanced chemical vapor deposition

By Kim K.   Kwon D.   Lee G.S.  

Thin Solid Films, Vol. 332, Iss. 1, 1998-11 ,pp. : 369-374

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Low dielectric constant CF/SiOF composite film deposition in a helicon plasma reactor

By Yun S.-M.   Chang H.-Y.   Kang M.-S.   Choi C.-K.  

Thin Solid Films, Vol. 341, Iss. 1, 1999-03 ,pp. : 109-111

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