The effects of plasma treatment for low dielectric constant hydrogen silsesquioxane (HSQ)

By Liu P.T.   Chang T.C.   Sze S.M.   Pan F.M.   Mei Y.J.   Wu W.F.   Tsai M.S.   Dai B.T.   Chang C.Y.   Shih F.Y.   Huang H.D.  

Thin Solid Films, Vol. 332, Iss. 1, 1998-11 ,pp. : 345-350

Elsevier

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Effects of double bonding configurations on thermal stability of low-hydrogen concentration fluorinated amorphous carbon thin-films with low dielectric constant prepared by sputtering with hydrogen dilution

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Vacuum, Vol. 59, Iss. 2, 2000-11 ,pp. : 771-776

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Thin film interaction between low-k dielectric hydrogen silsesquioxane (HSQ) and Ti barrier layer

By Zeng Y.   Russell S.W.   McKerrow A.J.   Chen P.   Alford T.L.  

Thin Solid Films, Vol. 360, Iss. 1, 2000-02 ,pp. : 283-292

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Enhanced thermal stability of TA-based thin diffusion barriers by ion implantation

By Peikert M.   Wieser E.   Reuter H.   Wenzel C.  

Vacuum, Vol. 69, Iss. 1, 2002-12 ,pp. : 91-95

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Hydrogen-ion implantation in GaAs

By Gawlik G.   Ratajczak R.   Turos A.   Jagielski J.   Bedell S.   Lanford W.L.  

Vacuum, Vol. 63, Iss. 4, 2001-08 ,pp. : 697-700

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