Effect of Sb as a surfactant on the inner diffusion of epilayer Ge atoms into Si substrate

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Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 116-119

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Effect of substrate temperature on the texture and structure of polycrystalline Si 0.7 Ge 0.3 films deposited on SiO 2 by molecular beam deposition

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Sb segregation in Si and SiGe: effect on the growth of self-organised Ge dots

By Portavoce A.   Volpi F.   Ronda A.   Gas P.   Berbezier I.  

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Low-temperature transport properties of InSb films on GaAs(100) substrates

By Ishida S.   Takeda K.   Okamoto A.   Shibasaki I.  

Physica E, Vol. 18, Iss. 1, 2003-05 ,pp. : 159-160

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Epitaxial growth of InSb films by r.f. magnetron sputtering

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