The influence of growth temperature on the period of RHEED oscillations during MBE of Si and Ge on Si(111) surface

By Nikiforov A.I.   Markov V.A.   Cherepanov V.A.   Pchelyakov O.P.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 183-187

Elsevier

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Growth of epitaxial SiGe nanostructures at low temperature on Si(100) using hot-wire assisted gas source molecular beam epitaxy

By Koulmann J.J.   Chelly R.   Angot T.   Louis P.   Bolmont D.   Werckmann J.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 84-87

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Strong surface segregation of Sb atoms at low temperatures during Si molecular beam epitaxy

By Jiang Z.M.   Pei C.W.   Liao L.S.   Zhou X.F.   Zhang X.J.   Wang X.   Jia Q.J.   Jiang X.M.   Ma Z.H.   Smith T.   Sou I.K.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 236-239

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Low-temperature epitaxial growth of B doped Si films on Si(100) and Si(111)

By Schwarzkopf J.   Selle B.   Schmidbauer M.   Fuhs W.  

Thin Solid Films, Vol. 427, Iss. 1, 2003-03 ,pp. : 274-278

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Model of the RHEED intensity oscillations based on reflectivity of the MBE grown surface

By Papajova D.   Vesely M.  

Vacuum, Vol. 49, Iss. 4, 1998-04 ,pp. : 297-302

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