Distributed growth model used for the interpretation of RHEED intensity oscillations observed during the growth of Pb on Si(111) substrates

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Elsevier

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RHEED investigation of limiting thickness epitaxy during low-temperature Si-MBE on (100) surface

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Growth of Ge on H-terminated Si(111) surface

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Surface processes and phase diagrams in MBE growth of Si/Ge heterostuctures

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Surface segregation of boron atoms in Si and strained Si 1-x Ge x layers during MBE growth: Experiment and simulation

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